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an important notice at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. production data. tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 tps7510x low dropout, two-bank led driver with pwm brightness control 1 1 features 1 ? regulated output current with 2% led-to-led matching ? drives up to four leds at 25 ma each in a common cathode topology ? 28-mv typical dropout voltage extends usable supply range in li-ion battery applications ? brightness control using pwm signals ? two 2-led banks with independent enable and pwm brightness control per bank ? no internal switching signals ? eliminates emi ? default led current eliminates external components ? default values from 3 ma to 10 ma (in 1-ma increments) available using innovative factory eeprom programming ? optional external resistor can be used for high-accuracy, user-programmable current ? over current and over temperature protection ? available in wafer chip-scale package or 2.50-mm 2.50-mm wson-10 2 applications ? keypad and display backlighting ? white and color leds ? cellular handsets ? pdas and smartphones 3 description the tps7510x linear low dropout (ldo) matching led current source is optimized for low-power keypad and navigation pad led backlighting applications. the device provides a constant current to up to four unmatched leds organized in two banks of two leds each in a common-cathode topology. without an external resistor, the current source defaults to a factory-programmable, preset current level with 0.5% accuracy (typical). an optional external resistor can be used to set initial brightness to user-programmable values with higher accuracy. brightness can be varied from off to full brightness by inputting a pulse width modulation (pwm) signal on each enable pin (enx, where x indicates led bank a or b). each bank has independent enable and brightness control, but current matching is done to all four channels concurrently. the input supply range is ideally suited for single-cell li-ion battery supplies and the tps7510x can provide up to 25 ma per led. no internal switching signals are used, eliminating troublesome electromagnetic interference (emi). the tps7510x is offered in an ultra-small, 9-ball, 0.4-mm ball-pitch wafer chip-scale package (wcsp) and a 2.50-mm 2.50-mm, 10-pin wson package, yielding a very compact total solution size ideal for mobile handsets and portable backlighting applications. the device is fully specified over t j = ? 40 c to +85 c. device information (1) part number package body size (nom) tps7510x wson (10) 2.50 mm 2.50 mm dsbga (9) 1.208 mm x 1.208 mm (1) for all available packages, see the orderable addendum at the end of the data sheet. typical application diagram productfolder v in ena d1ad2a d1b d2b enb v ena v enb i set v batt tps7510x support &community tools & software technical documents sample &buy
2 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated table of contents 1 features .................................................................. 1 2 applications ........................................................... 1 3 description ............................................................. 1 4 revision history ..................................................... 2 5 pin configuration and functions ......................... 3 6 specifications ......................................................... 4 6.1 absolute maximum ratings ...................................... 4 6.2 esd ratings .............................................................. 4 6.3 recommended operating conditions ....................... 4 6.4 thermal information .................................................. 4 6.5 electrical characteristics ........................................... 5 6.6 typical characteristics .............................................. 6 7 detailed description .............................................. 8 7.1 overview ................................................................... 8 7.2 functional block diagram ......................................... 8 7.3 feature description ................................................... 9 7.4 device functional modes .......................................... 9 8 application and implementation ........................ 10 8.1 application information ............................................ 10 8.2 typical application .................................................. 12 9 power supply recommendations ...................... 14 10 layout ................................................................... 14 10.1 layout guidelines ................................................. 14 10.2 layout example .................................................... 14 11 device and documentation support ................. 15 11.1 device support ...................................................... 15 11.2 documentation support ........................................ 15 11.3 related links ........................................................ 15 11.4 receiving notification of documentation updates 15 11.5 community resources .......................................... 15 11.6 trademarks ........................................................... 16 11.7 electrostatic discharge caution ............................ 16 11.8 glossary ................................................................ 16 12 mechanical, packaging, and orderable information ........................................................... 16 4 revision history note: page numbers for previous revisions may differ from page numbers in the current version. changes from revision i (november 2013) to revision j page ? added device information table, typical application diagram title to front-page diagram, esd ratings table, thermal information table, feature description section, device functional modes section, application and implementation section, power supply recommendations section, layout section, device and documentation support section, and mechanical, packaging, and orderable information section ............................................................... 1 ? changed son to wson throughout document .................................................................................................................... 1 ? deleted pin out drawings from typical application diagram figure ........................................................................................ 1 ? changed i/o status to i from o in d1b row of pin functions table ....................................................................................... 3 ? deleted dissipation ratings table ........................................................................................................................................... 4 changes from revision h (january 2010) to revision i page ? changed test conditions for ground current parameter in the electrical characteristics ....................................................... 5 ? deleted figure 14; duplicate mechanical image. ................................................................................................................. 12 changes from revision g (march 2009) to revision h page ? revised ground current parameter, electrical characteristics; changed symbol from i q to i gnd ; added specifications for yff and dsk packages .................................................................................................................................................... 5 ? added yff and dsk package specifications for current matching parameter, electrical characteristics ............................ 5 ? changed diode current accuracy parameter, electrical characteristics, to reflect yff and dsk package specifications .... 5 ? deleted operating junction temperature range specification from electrical characteristics table to eliminate redundancy . 5
3 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 5 pin configuration and functions yff package 9-pin dsbga top view dsk package 10-pin wson top view pin functions pin i/o description name wcsp wson ena a3 2 i enable pin, bank a. driving this pin high turns on the current source to bank a outputs. driving this pin low turns off the current source to bank a outputs. an applied pwm signal reduces the led current (between 0 ma and the maximum current set by i set ) as a function of the duty cycle of the pwm signal. ena and enb can be tied together. ena can be left open or connected to gnd if not used. see the application and implementation section for more details. d1a b3 3 o diode source current output, bank a. connect to led anode. d2a c3 4 o diode source current output, bank a. connect to led anode. enb a2 1 i enable pin, bank b. driving this pin high turns on the current source to bank b outputs. driving this pin low turns off the current source to bank b outputs. an applied pwm signal reduces the led current (between 0 ma and the maximum current set by i set ) as a function of the duty cycle of the pwm signal. ena and enb can be tied together. enb can be left open or connected to gnd if not used. see the application and implementation section for more details. v in b2 9 i supply input gnd c2 5, pad ? ground i set a1 10 i an optional resistor can be connected between this pin and gnd to set the maximum current through the leds. if no resistor is connected, i set defaults to the internally programmed value. d1b b1 8 o diode source current output, bank b. connect to led anode. d2b c1 7 o diode source current output, bank b. connect to led anode. nc ? 6 ? not internally connected a3 a2 a1 c3 c2 c1 b1 b3b2 1 23 4 5 10 9 8 7 6 note (1): not connected gnd enb ena d1ad2a gnd i set v in d1bd2b nc (1)
4 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 6 specifications 6.1 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) min max unit v in range ? 0.3 7 v v iset , v ena , v enb , v dx range ? 0.3 v in v i dx for d1a, d2a, d1b, d2b 35 ma d1a, d2a, d1b, d2b short-circuit duration indefinite continuous total power dissipation internally limited junction temperature, t j ? 55 150 c storage temperature, t stg ? 55 150 c (1) jedec document jep155 states that 500-v hbm allows safe manufacturing with a standard esd control process. (2) jedec document jep157 states that 250-v cdm allows safe manufacturing with a standard esd control process. 6.2 esd ratings value unit v (esd) electrostatic discharge human-body model (hbm), per ansi/esda/jedec js-001 (1) 2000 v charged-device model (cdm), per jedec specification jesd22-c101 (2) 500 6.3 recommended operating conditions parameter min nom max unit v in input voltage 2.7 5.5 v i dx operating current per led 3 25 ma t pwm on-time for pwm signal 33 s t j operating junction temperature range ? 40 85 c (1) for more information about traditional and new thermal metrics, see the semiconductor and ic package thermal metrics application report. 6.4 thermal information thermal metric (1) tps7510x unit yff (dsbga) dsk (wson) 9 pins 10 pins r ja junction-to-ambient thermal resistance 101.6 65.3 c/w r jc(top) junction-to-case (top) thermal resistance 1.2 54.0 c/w r jb junction-to-board thermal resistance 17.6 39.5 c/w jt junction-to-top characterization parameter 0.6 1.6 c/w jb junction-to-board characterization parameter 17.8 39.7 c/w r jc(bot) junction-to-case (bottom) thermal resistance n/a 23.6 c/w
5 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated (1) average of all four i dx outputs. 6.5 electrical characteristics over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8 v, dxa and dxb = 3.3 v, r set = 32.4 k ? , and ena and enb = 3.8 v (unless otherwise noted); typical values are at t a = 25 c parameter test conditions min typ max unit i shdn shutdown supply current v ena,b = 0 v, v dx = 0 v 0.03 1 a i gnd ground current dsk package i dx 5 ma, v in = 3.8 v 170 230 a i dx > 5 ma, v in = 3.8 v 250 300 yff package i dx 5 ma, v in = 4.5 v 170 200 i dx > 5 ma, v in = 4.5 v 250 300 i d current matching (i dxmax ? i dxmin / i dxmax ) 100% t a = 25 c 0% 2% 4% t a = ? 40 c to +85 c yff package 0% 5% dsk package 0% 6% i dx %/ v in line regulation 3.5 v v in 4.5 v, i dx = 5 ma 2.0 %/v i dx %/ v dx load regulation 1.8 v v dx 3.5 v, i dx = 5 ma 0.8 %/v v do dropout voltage of any dx current source (v dx at i dx = 0.8 i dx, nom ) i dxnom = 5 ma 28 100 mv i dxnom = 15 ma 70 v iset reference voltage for current set 1.183 1.225 1.257 v i open diode current accuracy (1) i set = open, v dx = v in ? 0.2 v yff package 0.5% 3% dsk package 0.5% 4% i set i set pin current range 2.5 62.5 a k i set to i dx current ratio (1) 420 v ih enable high level input voltage 1.2 v v il enable low level input voltage 0.4 v i ina enable pin a (v ena ) input current v ena = 3.8 v 5.0 6.1 a v ena = 1.8 v 2.2 i inb enable pin b (v enb ) input current v enb = 3.8 v 4.0 4.9 a v enb = 1.8 v 1.8 t sd shutdown delay time delay from ena and enb = low to reach shutdown current (i dx = 0.1 i dx, nom ) 5 13 30 s t sd thermal shutdown temperature shutdown, temperature increasing 165 c reset, temperature decreasing 140
6 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 6.6 typical characteristics over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8 v, dxa and dxb = 3.3 v, r set = 32.4 k ? , and ena and enb = high (unless otherwise noted); typical values are at t a = 25 c figure 1. led current vs duty cycle (f = 300 hz) figure 2. line transient (600-mv pulse) figure 3. line transient (300-mv pulse) figure 4. dimming response (both channels) figure 5. dimming response (single channel) figure 6. output current vs headroom voltage 30 0 100 10 20 40 duty cycle (%) i (ma) out 2520 15 10 50 50 60 70 80 90 0.5ma/div 1v/div i out v in 20 s/div m 3.6v 3.9v 0.5ma/div 1v/div i out v in 20 s/div m 3.3v 3.6v 20ma/div 1v/div i out ena = enb 20 s/div m 1.2v 0.4v 20ma/div 1v/div i out enb 20 s/div m 1.2v ena = 3.8v 0.4v 0.06 0 0.20 0.02 0.04 0.08 v v - (v) in out i (ma) out 2520 15 10 50 0.10 0.12 0.14 0.16 0.18 +85 c +25 c - 40 c
7 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated typical characteristics (continued) over operating junction temperature range (t j = ? 40 c to +85 c), v in = 3.8 v, dxa and dxb = 3.3 v, r set = 32.4 k ? , and ena and enb = high (unless otherwise noted); typical values are at t a = 25 c figure 7. output current vs r set figure 8. output current vs r set figure 9. ground current vs input voltage figure 10. tps75105 output current vs input voltage r set = open figure 11. tps75105 output current vs temperature r set = open figure 12. output current vs output voltage 1.5 0 4.0 0.5 1.0 2.0 v (v) out i (ma) out 2018 16 14 12 10 86 4 2 0 2.5 3.0 3.5 +85 c +25 c - 40 c 20 - 40 - 20 0 40 temperature ( c) i (ma) out 5.45.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 60 80 85 i d2b out i d1b out i d2a out i d1a out 50 20 100 30 40 60 r (k ) w set i (ma) out 2826 24 22 20 18 16 14 12 10 86 4 2 0 70 80 90 140 20 420 460 500 60 100 180 r (k ) w set i (ma) out 2826 24 22 20 18 16 14 12 10 86 4 2 0 220 260 300 340 380 expanded range 4.0 2.5 5.5 3.0 3.5 4.5 v (v) in i ( a) m q 180175 170 165 160 155 5.0 +85 c +25 c - 40 c i (ma) out v (v) in 5.45.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 3.4 4.4 4.9 5.4 3.9 5.9 +25 c +85 c - 40 c
8 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 7 detailed description 7.1 overview the tps7510x linear low dropout (ldo) matching led current source is optimized for low-power keypad and navigation pad led backlighting applications. the device provides a constant current to up to four unmatched leds organized in two banks of two leds each in a common-cathode topology. brightness can be varied from off to full brightness by inputting a pulse width modulation (pwm) signal on each enable pin (enx, where x indicates led bank a or b). each bank has independent enable and brightness control, but current matching is done to all four channels concurrently. the input supply range is ideally suited for single-cell li-ion battery supplies and the tps7510x can provide up to 25 ma per led. 7.2 functional block diagram current reference d1ad2a d1b d2b v in enb gnd i set ena controlled current source controlled current source controlled current source controlled current source int/ext set current sense control logic control logic 800k w 1m w
9 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 7.3 feature description 7.3.1 load regulation the tps7510x is designed to provide very tight load regulation. in the case of a fixed current source, the output load change is a change in voltage. tight load regulation means that output voltages (led forward voltages) with large variations can be used without impacting the fixed current being sourced by the output or the output-to- output current matching. the permissible variation on the output not only allows for large variations in white led forward voltages, but even permits the use of different color leds on different outputs with minimal effect on output current. 7.3.2 line regulation the tps7510x is also designed to provide very tight line regulation. this architecture allows for voltage transient events to occur on the power supply (battery) without effecting the fixed output current levels or the output-to- output current matching. a prime example of such a supply transient event is the occurrence of a transmit pulse on the radio of a mobile handset. these transient pulses can cause variations of 300 mv and 600 mv on the supply to the tps7510x. the line regulation limitation is that the lower supply voltage level of the event does not cause the input-to-output voltage difference to drop below the dropout voltage range. 7.4 device functional modes 7.4.1 led on apply 1.2 v or more to enx to turn the led bank on. 7.4.2 led off apply a voltage less than or equal to 0.4v to enx to turn the led bank off.
10 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 8 application and implementation note information in the following applications sections is not part of the ti component specification, and ti does not warrant its accuracy or completeness. ti ? s customers are responsible for determining suitability of components for their purposes. customers should validate and test their design implementation to confirm system functionality. 8.1 application information the tps7510x provides a constant current to up to four unmatched leds organized in two banks of two leds each in a common-cathode topology. without an external resistor, the current source defaults to a factory- programmable, preset current level with 0.5% accuracy (typical). an optional external resistor can be used to set initial brightness to user-programmable values with higher accuracy. brightness can be varied from off to full brightness by inputting a pulse width modulation (pwm) signal on each enable pin (enx, where x indicates led bank a or b). each bank has independent enable and brightness control, but current matching is done to all four channels concurrently. the input supply range is ideally suited for single-cell li-ion battery supplies and the tps7510x can provide up to 25 ma per led. no internal switching signals are used, eliminating troublesome electromagnetic interference (emi). the device is fully specified over t j = ? 40 c to +85 c. 8.1.1 setting the output current level the tps7510x is a quad matched current source. each of the four current source output levels is set by a single reference current. an internal voltage reference of 1.225 v (nominal) in combination with a resistor sets the reference current level. this reference current is then mirrored onto each of the four outputs with a ratio of typically 420:1. the resistor required to set the led current is calculated using equation 1 : where: ? k is the current ratio ? v iset is the internal reference voltage ? i led is the desired led current (1) for example, to set the led current level to 10ma, a resistor value of 51.1 k ? is required. this value sets up a reference current of 23.9 a (1.22 v / 51.1 k ? ). in turn, this reference current is mirrored to each output current source, resulting in an output current of 10 ma (23.9 a 420). the tps7510x offers two methods for setting the output current levels. the led current is set either by connecting a resistor (calculated using equation 1 ) from the i set pin to gnd, or leaving i set unconnected to employ the factory-programmed r set resistance. the internal programmed resistance is implemented using high-precision processing and yields a reference current accuracy of 0.5%, nominal. accuracy using external resistors is subject to the tolerance of the external resistor and the accuracy of the internal reference voltage. the tps7510x automatically detects the presence of an external resistor by monitoring the current out of the i set pin. current levels in excess of 3 a signify the presence of an external resistor and the device uses the external resistor to set the reference current. if the current from i set is less than 3 a, the device defaults to the preset internal reference set resistor. the tps7510x is available with eight preset current levels, from 3 ma to 10 ma (per output) in 1-ma increments. solutions using the preset internal current level eliminate an external component, thereby increasing accuracy and reducing cost. r = iset k v iset i led
11 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated application information (continued) (1) i dx = (v set / r set ) k. table 1. recommended (1% tolerance) set resistor values r set (k ? ) i set ( a) i dx (ma) (1) 511 2.4 1.0 255 4.8 2.0 169 7.2 3.0 127 9.6 4.1 102 12.0 5.0 84.5 14.5 6.1 73.2 16.7 7.0 64.9 18.9 7.9 56.2 21.8 9.2 51.1 24.0 10.1 46.4 26.4 11.1 42.2 29.0 12.2 39.2 31.3 13.1 36.5 33.6 14.1 34.0 36.0 15.1 32.4 37.8 15.9 30.1 40.7 17.1 28.7 42.7 17.9 26.7 45.9 19.3 25.5 48.0 20.2 24.3 50.4 21.2 23.2 52.8 22.2 22.1 55.4 23.3 21.5 57.0 23.9 20.5 59.8 25.1 8.1.2 limitations on led forward voltages the tps7510x is a linear current source implementing ldo regulator building blocks. therefore, to maintain accurate operation, there are some limitations to the forward (output) voltages that can be used. the first limitation is the maximum led forward voltage. the dropout voltage must be considered because ldo technology is employed. the tps7510x is an ultra-low dropout device with typical dropouts in the range of 30 mv at 5 ma. care must be taken in the design to ensure that the difference between the lowest possible input voltage (for example, battery cut-off) and the highest possible forward voltage yields at least 100 mv of headroom. headroom levels less than dropout decrease the accuracy of the current source (see figure 6 ). the other limitation to consider is the minimum output voltage required to yield accurate operation. the current source employs nmos mosfets, and a minimum forward led voltage of approximately 1.5 v on the output is required to maintain highest accuracy. the tps7510x is ideal for white leds and color leds with forward voltages greater than 1.5 v. this range includes red leds that have typical forward voltages of 1.7 v. 8.1.3 use of external capacitors the tps7510x does not require the use of any external capacitors for stable operation. nominal stray and power-supply decoupling capacitance on the input is adequate for stable operation. capacitors are not needed for stability and are therefore not recommended on the outputs.
12 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 8.1.4 use of unused outputs or tying outputs together unused outputs can be left unconnected or tied to the v in supply. although open outputs are acceptable, tying unused outputs to the v in supply increases esd protection. connecting unused outputs to ground violates the minimum recommended output voltage, results in current levels that potentially exceed the set or preset led current, and must be avoided. connecting outputs in parallel is an acceptable way of increasing the amount of led current drive. this configuration is a useful trick when the higher current level is a multiple of the preset value. 8.1.5 use of enable pins for pwm dimming the tps7510x divides control of the led outputs into two banks of two current sources each. each bank is controlled by the use of an independent, active-high enable pin (ena and enb). the enable pin can be used for standard on or off operation of the current source, driven by standard logic levels from processor gpio pins, for example. drive enx high to turn on the bank of leds; drive enx low to turn off the bank of leds. another use of the enable pins is for led dimming. led brightness is a function of the current level being driven across the diode and the time that current is being driven through the diode. the perceived brightness of an led can be changed by either varying the current level or, more effectively, by changing the time in which that current is present. when a pwm signal is input into the enable pin, the duty cycle (high- or on-time) determines how long the fixed current is driven across the leds. reducing or increasing that duration has the effect of dimming or brightening the led, without having to employ the more complex method of varying the current level. this technique is particularly useful for reducing led brightness in low ambient light conditions, where led brightness is not required, thereby decreasing current consumption. the enable pins can also be used for led blinking, varying blink rates based on system status. although providing many useful applications, pwm dimming does have a minimum duty cycle required to achieve the required current level. the recommended minimum on-time of the tps7510x is approximately 33 s. on-times less than 33 s result in reductions in the output current by not allowing enough time for the output to reach the desired current level. also, having both enables switching together, asynchronously, or having one enable on at all times, effects the minimum recommended on-time (see figure 4 and figure 5 ). if one enable is already on, the speed at which the other channel turns on is faster than if both channels are turning on together or if the other channel is off. therefore, already having one channel enabled allows for approximately 10- s to 12- s shorter minimum on-times for the switching channel. unused enable pins can be left unconnected or connected to ground to minimize current consumption. connecting unused enable pins to ground increases esd protection. if connected to v in , a small amount of current drains through the enable input (see the electrical characteristics table). 8.2 typical application figure 13. typical application diagram ena d1ad2a d1b d2b enbi set gnd tps7510x v in dimming pwm or cpu gpio r set (optional) li-ionbattery
13 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated typical application (continued) 8.2.1 design requirements table 2 shows the design requirements. table 2. design parameters parameter design requirement input voltage 3.8 v number of leds 4 led current 5 ma (per led) 8.2.2 detailed design procedure select the tps75105 so that no external resistor is required to set the led current. 8.2.3 application curve r set = open figure 14. tps75105 output current vs temperature 20 - 40 - 20 0 40 temperature ( c) i (ma) out 5.45.3 5.2 5.1 5.0 4.9 4.8 4.7 4.6 60 80 85 i d2b out i d1b out i d2a out i d1a out
14 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 9 power supply recommendations the tps7510x is designed to operate with an input voltage between 2.7 v to 5.5 v. 10 layout 10.1 layout guidelines figure 15 demonstrates an example layout for the wson package. 10.2 layout example figure 15. layout example for the wson (dsk) package gnd p lane r set enb ena vin
15 tps75100 , tps75103 , tps75105 www.ti.com sbvs080j ? september 2006 ? revised november 2016 product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated (1) for the most current package and ordering information see the package option addendum at the end of this document, or see the ti web site at www.ti.com . (2) default set currents from 3 ma to 10 ma in 1-ma increments are available through the use of innovative factory eeprom programming. minimum order quantities may apply. contact factory for details and availability. 11 device and documentation support 11.1 device support 11.1.1 development support two evaluation modules (evms) are available to assist in the initial circuit performance evaluation using the tps7510x. the tps75105evm-174 and tps75105dskevm-529 evaluation modules (and related user guides) can be requested at the texas instruments website through the product folders or purchased directly from the ti estore. 11.1.2 device nomenclature product id options (1) (2) tps7510 x yyyz x is the nominal default diode output current (for example, 3 = 3 ma, 5 = 5 ma, and 0 = 10 ma). yyy is the package designator. z is the reel quantity (r = 3000, t = 250). 11.2 documentation support 11.2.1 related documentation for related documentation see the following: ? tps75105evm-174 evaluation module (slvu182) ? tps75105dskevm-529 evaluation module (slvu334) 11.3 related links the table below lists quick access links. categories include technical documents, support and community resources, tools and software, and quick access to sample or buy. table 3. related links parts product folder sample & buy technical documents tools & software support & community tps75100 click here click here click here click here click here tps75103 click here click here click here click here click here tps75105 click here click here click here click here click here 11.4 receiving notification of documentation updates to receive notification of documentation updates, navigate to the device product folder on ti.com. in the upper right corner, click on alert me to register and receive a weekly digest of any product information that has changed. for change details, review the revision history included in any revised document. 11.5 community resources the following links connect to ti community resources. linked contents are provided "as is" by the respective contributors. they do not constitute ti specifications and do not necessarily reflect ti's views; see ti's terms of use . ti e2e ? online community ti's engineer-to-engineer (e2e) community. created to foster collaboration among engineers. at e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. design support ti's design support quickly find helpful e2e forums along with design support tools and contact information for technical support.
16 tps75100 , tps75103 , tps75105 sbvs080j ? september 2006 ? revised november 2016 www.ti.com product folder links: tps75100 tps75103 tps75105 submit documentation feedback copyright ? 2006 ? 2016, texas instruments incorporated 11.6 trademarks e2e is a trademark of texas instruments. all other trademarks are the property of their respective owners. 11.7 electrostatic discharge caution this integrated circuit can be damaged by esd. texas instruments recommends that all integrated circuits be handled with appropriate precautions. failure to observe proper handling and installation procedures can cause damage. esd damage can range from subtle performance degradation to complete device failure. precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. 11.8 glossary slyz022 ? ti glossary . this glossary lists and explains terms, acronyms, and definitions. 12 mechanical, packaging, and orderable information the following pages include mechanical, packaging, and orderable information. this information is the most current data available for the designated devices. this data is subject to change without notice and revision of this document. for browser-based versions of this data sheet, refer to the left-hand navigation.
package option addendum www.ti.com 15-apr-2017 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish (6) msl peak temp (3) op temp (c) device marking (4/5) samples tps75100dskr active son dsk 10 3000 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 skx tps75100dskt active son dsk 10 250 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 skx tps75100yffr active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fb tps75100yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fb tps75103yffr active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fc tps75103yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fc tps75105dskr active son dsk 10 3000 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 chh tps75105dskt active son dsk 10 250 green (rohs & no sb/br) cu nipdau level-1-260c-unlim -40 to 85 chh tps75105yffr active dsbga yff 9 3000 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fe tps75105yfft active dsbga yff 9 250 green (rohs & no sb/br) snagcu level-1-260c-unlim -40 to 85 fe (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material)
package option addendum www.ti.com 15-apr-2017 addendum-page 2 (3) msl, peak temp. - the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. (6) lead/ball finish - orderable devices may have multiple material finish options. finish options are separated by a vertical ruled line. lead/ball finish values may wrap to two lines if the finish value exceeds the maximum column width. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant tps75100dskr son dsk 10 3000 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75100dskt son dsk 10 250 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75100yffr dsbga yff 9 3000 180.0 8.4 1.34 1.34 0.81 4.0 8.0 q1 tps75100yfft dsbga yff 9 250 180.0 8.4 1.34 1.34 0.81 4.0 8.0 q1 tps75103yffr dsbga yff 9 3000 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75103yfft dsbga yff 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75105dskr son dsk 10 3000 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75105dskt son dsk 10 250 179.0 8.4 2.73 2.73 0.8 4.0 8.0 q2 tps75105yffr dsbga yff 9 3000 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 tps75105yfft dsbga yff 9 250 180.0 8.4 1.45 1.45 0.8 4.0 8.0 q1 package materials information www.ti.com 3-aug-2017 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) tps75100dskr son dsk 10 3000 203.0 203.0 35.0 tps75100dskt son dsk 10 250 203.0 203.0 35.0 tps75100yffr dsbga yff 9 3000 182.0 182.0 20.0 tps75100yfft dsbga yff 9 250 182.0 182.0 20.0 tps75103yffr dsbga yff 9 3000 210.0 185.0 35.0 tps75103yfft dsbga yff 9 250 210.0 185.0 35.0 tps75105dskr son dsk 10 3000 203.0 203.0 35.0 tps75105dskt son dsk 10 250 203.0 203.0 35.0 tps75105yffr dsbga yff 9 3000 210.0 185.0 35.0 tps75105yfft dsbga yff 9 250 210.0 185.0 35.0 package materials information www.ti.com 3-aug-2017 pack materials-page 2
www.ti.com package outline c 0.625 max 0.30 0.12 0.8 typ 0.8 typ 0.4 typ 0.4 typ 9x 0.3 0.2 b e a d dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: 1. all linear dimensions are in millimeters. any dimensions in parenthesis are for reference only. dimensioning and tolerancing per asme y14.5m. 2. this drawing is subject to change without notice. ball a1 corner seating plane ball typ 0.05 c b 1 2 3 0.015 c a b symm symm a c scale 10.000d: max = e: max = 1.238 mm, min = 1.238 mm, min = 1.178 mm1.178 mm
www.ti.com example board layout 9x ( 0.23) (0.4) typ (0.4) typ ( 0.23) metal 0.05 max solder mask opening metal under solder mask ( 0.23) solder mask opening 0.05 min dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: (continued) 3. final dimensions may vary due to manufacturing tolerance considerations and also routing constraints. for more information, see texas instruments literature number snva009 (www.ti.com/lit/snva009). symm symm land pattern example scale:30x c 1 2 3 a b non-solder mask defined (preferred) solder mask details not to scale solder mask defined
www.ti.com example stencil design (0.4) typ (0.4) typ 9x ( 0.25) (r0.05) typ metal typ dsbga - 0.625 mm max height yff0009 die size ball grid array 4219552/a 05/2016 notes: (continued) 4. laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. symm symm c 1 2 3 a b solder paste example based on 0.1 mm thick stencil scale:30x

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